page 1 qw -bscxx rev : comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. CDBJSC101700-G rohs device maximum rating (at t a=25c unless otherwise noted) reverse v oltage: 1700 v forward current: 10 a d im e n s io n s in in c h e s a n d ( m il li m e t e r ) parameter unit repetitive peak reverse voltage dc bolcking voltage continuous forward current non-repetitive peak forward surge current power dissipation t ypical thermal resistance operating junction temperature range sym bol v rrm v dc i f i fsm p tot r jc t j 1700 90 192 82 0.78 -55 ~ +175 v v a a w c/w c storage temperature range t stg -55 ~ +175 c v alue 1700 t c = 25c t = 135c c t = 155c c 3 5 17 10 repetitive peak forward surge current i frm 50 a conditions t c = 25c, tp = 10ms half sine wave, d = 0.3 t c = 25c, tp = 10ms half sine wave t = 2 5 c c t = 1 10c c junction to case surge peak reverse voltage v rsm 1700 v t o-220-2 pin 0.052(1.32) 0.048(1.23) 0.173(4.40) 0.181(4.60) 0.512(13.00) 0.551(14.00) 0.620(15.75) 0.600(15.25) 0.155(3.93) 0.138(3.50) 0.116(2.95) 0.104(2.65) 0.152(3.85) 0.148(3.75) 0.028(0.70) 0.019(0.49) 0 .0 6 7 ( 1 .7 0 ) 0.0 35 (0. 88 ) 0.0 24 (0. 61 ) 0. 20 3( 5. 15 ) 0. 19 5( 4. 95 ) 0 .0 4 5 ( 1 .1 4 ) 0.646(16.40) max . 0.311(7.90) 0.303(7.70) 0.409(10.40) 0.394(10.00) 0.260(6.60) 0.244(6.20) 0.107(2.72) 0.094(2.40) circuit diagram k( 1) a(2) k(3) features - rated to 1700v at 10 amps - short recovery time. - high speed switching possible. - t emperature independent switching behaviour . - high temperature operation. - high frequency operation. - positive . temperature coef ficient on vf silicon carbide power schottky diode
electrical characteristics (at t a=25c unless otherwise noted) parameter conditions symbol t yp max unit t ypical characteristics ( ) CDBJSC101700-G page 2 pf 120 1600 c t otal capacitance t otal capacitive charge forward voltage v r = 0v , t j = 25c , f = 1 mh z a v r = 1200v , t j = 150c 1.7 3 100 200 v f i f = 10 a , t j = 25c i f = 10 a , t j = 175c v r = 1700v , t j = 25c v r = 1700v , t j = 175c i r v v r = 400v , t j = 25c , f = 1 mh z - nc 1.4 reverse current q c = c(v) dv vr 0 v r = 800v , t j = 25c , f = 1 mh z q c 2.1 80 90 1400 30 50 122 66 qw -bscxx rev : comchip t echnology co., l td. company reserves the right to improve product design , functions and reliability without notice. silicon carbide power schottky diode c a p a c i t a n c e b e t w e e n t e r m i n a l s , c j ( p f ) reverse v oltage, v r (v) fig.4 - capacitance vs. reverse v oltage 200 400 1600 0 800 0.01 0.1 1 10 100 1000 1000 1200 600 1400 fig.1 - forward characteristics f o r w a r d c u r r e n t , i f ( a ) forward v oltage, v f (v) 0 2 10 14 2.0 0 1.5 0.5 6 8 12 1.0 2.5 4 t =175c j t j =25c t j =75c t =125c j fig.2 - reverse characteristics r e v e r s e c u r r e n t , i r ( a ) reverse v oltage, v r (v) 0 15 90 0 500 1750 45 60 250 750 1250 1000 1500 30 75 2000 t =175c j t =125c j t j =25c t j =75c case t empature, t c (c) f o r w a r d c u r r e n t , i f ( a ) fig.3 - current derating 150 175 75 125 120 30 10 0 50 100 25 20 40 50 60 70 80 90 1 10 100 10% duty 30% duty 50% duty 70% duty d.c.
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